finite element 1d thermal model Search Results


1d finite element model  (COMSOL Inc)
90
COMSOL Inc 1d finite element model
1d Finite Element Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/10__1016_slash_j__jeurceramsoc__2020__10__056-269-2-23?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
1d finite element model - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
semiconductor module  (COMSOL Inc)
90
COMSOL Inc semiconductor module
Semiconductor Module, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pmc09164198-38-13-12?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
semiconductor module - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
one-dimensional finite element model comsol 3.5  (COMSOL Inc)
90
COMSOL Inc one-dimensional finite element model comsol 3.5
One Dimensional Finite Element Model Comsol 3.5, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm21215317-90-3-8?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
one-dimensional finite element model comsol 3.5 - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
1d finite element analysis device model  (COMSOL Inc)
90
COMSOL Inc 1d finite element analysis device model
1d Finite Element Analysis Device Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pmc09164198-38-1-12?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
1d finite element analysis device model - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
finite element solver comsol multiphysics  (COMSOL Inc)
90
COMSOL Inc finite element solver comsol multiphysics
Finite Element Solver Comsol Multiphysics, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm30074044-53-80-83?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
finite element solver comsol multiphysics - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
scaps_1d finite element device simulator  (SCAPS GmbH)
90
SCAPS GmbH scaps_1d finite element device simulator
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Scaps 1d Finite Element Device Simulator, supplied by SCAPS GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pmc12177845-83-17-16?v=SCAPS+GmbH
Average 90 stars, based on 1 article reviews
scaps_1d finite element device simulator - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
finite element analysis model  (COMSOL Inc)
90
COMSOL Inc finite element analysis model
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element Analysis Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/best_james_t__2019__novel_topologies_for_highly_scalable_non_volatile_nems_relays-578-14-13?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
finite element analysis model - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
finite element modeling comsol multiphysics  (COMSOL Inc)
90
COMSOL Inc finite element modeling comsol multiphysics
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element Modeling Comsol Multiphysics, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm36082903-97-15-14?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
finite element modeling comsol multiphysics - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
ant.1d  (Verlag GmbH)
90
Verlag GmbH ant.1d
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Ant.1d, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm29659059-115-27-3?v=Verlag+GmbH
Average 90 stars, based on 1 article reviews
ant.1d - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
universal v4.1d ta instruments sdt q600  (TA Instruments)
90
TA Instruments universal v4.1d ta instruments sdt q600
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Universal V4.1d Ta Instruments Sdt Q600, supplied by TA Instruments, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pmc03583544-66-16-18?v=TA+Instruments
Average 90 stars, based on 1 article reviews
universal v4.1d ta instruments sdt q600 - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
star, version 2.6.1d  (GitHub Inc)
90
GitHub Inc star, version 2.6.1d
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Star, Version 2.6.1d, supplied by GitHub Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm35883603-81-10-13?v=GitHub+Inc
Average 90 stars, based on 1 article reviews
star, version 2.6.1d - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier
1-d gel analysis software labimage 1d  (Kapelan Bio Imaging GmbH)
90
Kapelan Bio Imaging GmbH 1-d gel analysis software labimage 1d
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
1 D Gel Analysis Software Labimage 1d, supplied by Kapelan Bio Imaging GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite+element+1d+thermal+model/pm25282656-111-9-15?v=Kapelan+Bio+Imaging+GmbH
Average 90 stars, based on 1 article reviews
1-d gel analysis software labimage 1d - by Bioz Stars, 2026-08
90/100 stars
  Buy from Supplier

Image Search Results


Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS finite element device simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.

Journal: Small (Weinheim an Der Bergstrasse, Germany)

Article Title: Monolithic Perovskite/Silicon Tandem Solar Cells Enabled by Multifunctional TiO x Interconnects

doi: 10.1002/smll.202500969

Figure Lengend Snippet: Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS finite element device simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.

Article Snippet: To explain these results, device simulations were carried out for the same sample structures using the SCAPS_1D finite element device simulator.

Techniques: Injection